IRFZ48V DATASHEET PDF

IRFZ48V Transistor Datasheet, IRFZ48V Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRFZ48V MOSFET N-CH 60V 72A TOAB International Rectifier datasheet pdf data sheet FREE from Datasheet (data sheet) search for. IRFZ48V datasheet, IRFZ48V pdf, IRFZ48V data sheet, datasheet, data sheet, pdf , International Rectifier, 60V Single N-Channel HEXFET Power MOSFET in a.

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Soldering Temperature, for 10 seconds. International Rectifier Electronic Components Datasheet. Basic interchangeability with varyingdue and responsible care has been exercised in compiling this cross referenceclerical andnumber is not found in this cross reference guide, one or a datashest of the following exists: The cross reference represents the closest match tomatch in all cases.

Case-to-Sink, Flat, Greased Surface. Q rr Reverse Recovery Charge.

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IRFZ48V 데이터시트(PDF) – International Rectifier

The cross reference represents the closest. Cross ReferenceV1. Mounting torque, or M3 srew.

This Cross Reference is a guide only. See Figure 12 2 www.

TO package thermal resistance Text: C iss Input Capacitance. Fit, form andcross reference guide one or a combination of the following exists: Products may not be exactly the same and it is user’s responsibility to verify details for acceptable subsitution. Rectifier utilize advanced processing techniques to achieve.

IRFZ48V Datasheet PDF

The low thermal resistance and. Although due and responsible care has been exercised in compiling this cross referenceclerical andnumber is not found in this cross reference guide, one or a combination of the following exists: C rss Reverse Transfer Capacitance. Phonealkaline batteries For the most up-to-date information and cross reference listings, go tocross reference listings, go to www. Hammond is not responsibile for cross reference errors.

The low thermal resistance and low package cost of the TO contribute to its wide acceptance throughout the industry. L D Internal Drain Inductance. The TO package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. I S Continuous Source Current. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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No abstract text available Text: Previous 1 2 C oss Output Capacitance. Abracon will not be liable any. Source-Drain Ratings and Characteristics. Sinformation and cross reference listings, go to www. View PDF for Mobile.

The TO package is universally preferred for all. L S Internal Source Inductance. Allen-Bradley cat mn Abstract: