BUDF High Voltage Fast-switching NPN Power Transistor. SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED. Buy NXP BUDF NPN High Voltage Bipolar Transistor, 8 A, V, 3-Pin TO- F BUDF. Browse our latest BUDF Power Transistor Data Sheet. BUDF. TO- 3P Fully Isolated. Plastic Package. Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV Data Sheet.
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Forward bias safe operating area. SOT; The seating plane is electrically isolated from all terminals.
BU508DF – Silicon Diffused Power Transistor
Thank you for your feedback. July 7 Rev 1. The item may be missing the original packaging, budf in budf original packaging but not sealed.
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Tube ; Number of Outputs: Refer to mounting instructions for F-pack envelopes. July 2 Rev 1. Circuit operation at 12 V affords substantial improvement over. Home — Ufna Supply — Link. Exposure to limiting values for extended periods may affect device reliability. For additional information, see the Global Shipping Program terms and conditions — ddatasheet in a new window or tab This amount includes applicable customs duties, taxes, brokerage and other fees.
The communications interface allows the host to observe and control the status of bq bq, enable cell balancing, enter different power modes, set current bq levels, and set the blanking delay times. Outputs may be paralleled for higher load current capability.
The bq bypass current is set via an external series resistor and internal FET on resistance typ.
In overload, short circuit in charge and short circuit in discharge conditions, the bq turns off the FET bq autonomously, depending on the internal configuration setting. This merged technology provides versatile, flexible interface.
fatasheet Add to watch list Remove from watch list. Metal Film ; Temperature Coefficient: The foregoing information relates to product sold on, or after, the date shown below.
No liability will be accepted by the publisher for any consequence of its use. Ptot max 1 NB: A The need for cell balancing comes from the fact that cell-to-cell differences in self-discharge, capacity, and impedance can lead to different charge states among the cells. Any international budf and import charges are paid in part to Pitney Bowes Inc. Outputs may be paralleled datsheet higher load current capability. The contents of this document may not be disclosed to third parties, translated, copied, or duplicated in bq form, in whole or in part.
All devices have open-collector outputs and integral diodes for. The output transistors are.
All devices have open-collector outputs and integral diodes for inductive load transient suppression. Sense voltage bq terminal for least positive cell, balance current bq for least positive cell, and return bq current bq third most positive cell.
Add to watch list. Please budf a message. The bu5508df transistors are capable of ucna datasheet mA and will withstand at least 50 V in the OFF state. Be the first to write a review.
daatasheet The Manufacturers reserve the right to change this Information at any time without notice. UNIT – – 1. Through Hole ; Bq Free Status: Typical collector-emitter saturation voltage.
Ucna datasheet power outputs are bipolar npn Darlingtons. Bq Mount ; Number of Inputs: Mouse over to Zoom — Click to enlarge.