BS170 FET DATASHEET FILE TYPE PDF

BS N-channel Enhancement Mode Field Effect Transistor. Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS. BS Transistor Datasheet, BS Equivalent, PDF Data Sheets. Type Designator: BS MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS/D TMOS FET Switching N Channel Enhancement BS October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. Please see the information tables in this datasheet for details. Power mosfet.

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Bs170 fet datasheet filetype pdf

Semiconductortransistor crossreference list peavey. Source drain diode symbol parameter test conditions min.

Bss8 nchannel fkle level enhancement mode field effect. Please see the information tables in this datasheet for details. The datasheet is printed for reference information only. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations datashedt discussions, written or oral, between the parties regarding the subject matter hereof.

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BS MOSFET Datasheet pdf – Equivalent. Cross Reference Search

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Parameter symbol maximum units absolute maximum ratings t c25c unless otherwise noted aodaoi pchannel enhancement mode field effect transistor features vds v 40v. The format of this data sheet has been redesigned to comply. All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section Nothing contained in this Dayasheet limits a party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in either: Parameter symbol 2n 2n vqj vqp vqjp bs unit drainsource voltage v ds 60 60 60 60 60 gatesource voltage nonrepetitive v.

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