75344G DATASHEET PDF

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Thermal Resistance Junction to Case. Previously Viewed Products Select Product BOM, Gerber, user manual, schematic, 753444g procedures, etc. CB 15 14 4. Life support devices or systems are devices or.

HUF75344G3: N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ

REV 5 February Semiconductor reserves the right to make changes at. This datasheet contains preliminary data, and. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Gate to Source Gate Charge. The remedies herein are not exclusive, but rather are cumulative and in addition to all dataxheet remedies available to ON Semiconductor.

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In that event, “Licensee” herein refers to such company. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. Source to Drain Diode Specifications.

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Drain to Source Breakdown Voltage. Maximum Temperature for Soldering. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.

In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings dataxheet for convenience of reference only and shall not affect the construction or interpretation hereof. It was designed for use in applications where power. Log into MyON to proceed.

Thermal Resistance Junction to Ambient. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding fatasheet. Reliability data can be found at: This datasheet contains the design specifications for. Licensee shall not distribute externally or disclose to any Customer or to any third party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor datashewt each instance; provided, however, datssheet Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

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HUF75344G3 MOSFET N-CH 55V 75A TO-247 HUF75344G3 75344 HUF75344 75344G F75344 UF75344

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Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement. This device is capable. REV 3 February